Mg# 
Topik 
Sub Topik 
Capaian Belajar Mahasiswa 
Sumber Materi 
1 
 History and overview
(1 hr)

 Tube, transistor, and integrated circuits and the information era.
 Signal representation and circuit macro modelling.
 Explain how electronics drives the exponential growth in the information era. (C2)
 Illustrate the concepts of circuit macro modelling and its application for analysing large and complex circuits. (C2)


Sedra Chp. 1.
Sec. 1.1 – 1.6 
 Electronic properties of materials (2 hrs)
 Basic semiconductor concepts.
 Semiconductors and device properties.
 Explain and apply the semiconductor concepts of drift, diffusion, donors and acceptors, majority and minority carriers, excess carriers. (C2)
 Summarize the main semiconductor properties, energy band, carrier concentration and transport, used for understanding electronic device characteristics. (C2)



Sedra Chp. 1.
Sec. 1.7 – 1.12 
2 
 Diodes (3 hrs)
 Diode structure and IV characteristics
 Diode models: large signal models, DC and small signal models
 Explain the underlying physics and principles of operation of pn junction diodes. (C2)
 Produce an incremental (small signal) linear equivalent circuit (LEC) model for a diode knowing its large signal characteristics, and understand and apply standard LEC models for pn diodes. (C3)
 Express the various diode models and their the limitations and choose the appropriate model for a given problem or situation. (C3)
 Produce parameter values for large signal and incremental LEC models for pn diodes based on knowledge of the device structure and dimensions, and of the bias condition. (C3)
 Perform a smallsignal analysis of diode circuits using small signal models for the diodes. (C4)



Sedra Chp. 3
Sec. 3.13.3 
3 
 Diodes (3 hrs)
 Diode models: reverse breakdown (zener).
 Diode applications circuits: rectifying, limiting and clamping, signal switching.
 Perform an analysis of regulator circuits using zener (C4)
 Design simple Diodes circuits to meet stated operating specifications. (C5)



Sedra Chp. 3
Sec. 3.43.6 
4 

 PNPN Diode and SCR
 DIAC and TRIAC
 Application of thyristor
 Explain the operation of PNPN diodes and SCR.
 Apply SCR and TRIAC for simple power drive.


Floyd Chp. 11 
 Bipolar transistor (1 hr)
 BJT structure, modes of operation.
 Explain the underlying physics and principles of operation of bipolar junction transistors (BJTs). (C2)



Sedra Chp. 4
Sec. 4.1 
5 
 Bipolar transistor (3 hrs)
 BJT IV characteristics.
 BJT models: large signal and DC models
 BJT models small signal models.
 Describes the IV characteristics of BJTs. (C2)
 Express the various BJT models and their the limitations, choose the appropriate model for a given problem or situation. (C3)
 Produce an incremental (small signal) linear equivalent circuit (LEC) model for a BJTknowing its large signal characteristics, and understand and apply standard LEC models for BJTs. (C3)
 Produce parameter values for large signal and incremental LEC models for BJTs based on knowledge of the device structure and dimensions, and of the bias condition. (C3)



Sedra Chp. 4
Sec. 4.24.4 
6 
 Bipolar transistor (3 hrs)
 BJT as an amplifier: General Configurations
 Common Emitter (CE) Amplifier
 Common Collector (CC) Amplifier
 Common Base (CB) Amplifier
 Explain, compare, and contrast the input, output, and gain characteristics of BJT amplifier. (C4)
 Perform a smallsignal analysis of an amplifier using small signal models for the BJTs. C(4)



Sedra Chp. 4
Sec. 4.54.6 
7 
 Bipolar transistor (2 hr)
 BJT amplifier biasing circuits.
 BJT as a switch.
 Design BJT biasing circuit for a single transistor amplifier. (C5)
 Design simple BJT amplifier circuits to meet stated operating specifications. (C5)
 Perform analyses of BJT as a switch. (C4)



Sedra Chp. 4
Sec. 4.74.8 
 MOS transistor (1 hr)
 MOSFET structure, modes of operation


 Explain the underlying physics and principles of operation of MOS field effect transistors (MOSFETs). (C2)

Sedra Chp. 5
Sec. 5.1 
8 
 MOS transistor (3 hrs)
 MOSFET IV characteristics.
 MOSFET models: large signal models
 MOSFET circuits at DC
 MOSFET models: small signal models.
 Describe the IV characteristic of a MOSFET
 Express the various MOSFET models and their the limitations and choose the appropriate model for a given problem or situation. (C3)
 Produce an incremental (small signal) linear equivalent circuit (LEC) model for a MOSFET knowing its large signal characteristics, and understand and apply standard LEC models for MOSFETs. (C3)
 Produce parameter values for large signal and incremental LEC models for MOSFETs based on knowledge of the device structure and dimensions, and of the bias condition. (C3)



Sedra Chp. 5
Sec. 5.25.4 
9 
 MOS transistor (3 hrs)
 MOSFET as an amplifier, bias, and biasing circuits.
 Basic single MOSFET amplifier configurations
 Common Source (CS) Amplifier
 Common Drain (SD) Amplifier
 Common Gate (CG Amplifier)
 MOSFET Biasing Circuits
 Design MOS biasing circuit for a single transistor amplifier. (C5)
 Explain, compare, and contrast the input, output, and gain characteristics of single MOSFET amplifier. (C4)
 Perform a smallsignal analysis of an CD, CS and CG amplifiers using small signal models for the MOS. C(4)
 Design simple MOS amplifier circuits to meet stated operating specifications. (C5)



Sedra Chp. 5
Sec. 5.55.8 
10 
 MOS transistor (2 hr)
 MOSFET as a switch.
 Perform analyses of MOSFET as a switch. (C4)
 Frequency Response (1 hrs)
 Amplifier transfer function.
 Sketch the magnitude and phaseof amplifiers transfer function charateristics. (C3)







Sedra Chp. 8
Sec. 8.1 
11 
 Frequency Response (3 hrs)
 Low frequency respons of amplifier
 Common emitter transistor short circuit current gain. Transition frequency.
 Hybrid – p model of the bipolar junction transistor.
 Miller’s theorem and Miller effect inthe voltage gain of common emitter and common source amplifiers.
 Produce and apply the small signal BJT and MOSFET models for low frequency response of simple amplifier circuits. (C3)
 Express the high frequency limitations of BJTs and MOSFETs. (C2)
 Produce a small signal linear equivalent circuit (LEC, hybridp) model for a MOSFET or BJT knowing its juction capacitances and terminal frequency. (C3)



Sedra Chp. 8
Sec. 8.28.5 
12

 Frequency Response (3 hr)
 Single Transistor Amplifier small signal circuit equivalent for the high frequency
 Produce and apply the small signal high frequency BJT and MOSFET models for CE or CS (C3)
 Produce the small signal high frequency BJT and MOSFET models for the analyses of CC, CD, CB and CG amplifier circuits. (C3)



Sedra Chp. 8
Sec. 8.68.7 
13 
 MOS logic families (1 hr)
 Design parameters and issues in CMOS Logics (2 hrs)
 Basic concepts, NMOS and CMOS logic circuits.
 Design and analyses of CMOS inverters.
 Explain the operation and features of common MOS logic inverter stages. (C2)Produce the transfer characteristics of a CMOS inverter and show how device dimensions and parameters impact them and inverter switching speed. (C3)
 Solve the output produced by a circuit for a given set of inputs using the switch resistor model of a MOSFET. (C3)



Sedra Chp. 14
Sec. 14.1
Sedra Chp. 14
Sec. 14.214.3 
14 
 Design parameters and issues in CMOS Logics (3 hrs)
 Performance analyses of CMOS inverters
 CMOS AOI gate structures
 Survey the power dissipation in digital gates and employ CMOS technology to reduce static power losses. (C4)
 Design AOI gate circuits.



Sedra Chp. 14
Sec. 14.314.4 
15 
 Output Stage and Power Amplifier (3 hrs)
 Classification of amplifier output stages, output signal waveform, and power disipation.
 Biasing the class AB amplifier.
 Thermal modelling and thermal management of the transistor power amplifier.
 Explain, compare, and contrast the classes of output stages and power amplifier. (C4)
 Determine the operating class (A, AB, B, C) of amplifiers, explain the applications of each type.
 Perform load line analysis to predict the voltage swing of transistor circuits and sketch the transfer characteristics. (C4)
 Appl y the simplified large signal model to calculate output power, dissipation power and efficiency for emitter (source) follower output stage and class B output stage. (C3)
 Perform simple thermal analyses of power transistors. (C4)



Sedra Chp. 13
Sec. 13.113.7 