ELS2202 Elektronika I

Kode Matakuliah:

ELS2202

Bobot sks:

 3

Semester:

4

KK / Unit Penanggung Jawab:

Prodi S1 Teknik Elektro

Sifat:

Wajib
Nama Matakuliah Elektronika
Electronics
Silabus Ringkas Fisik, operasi, dan model dioda, BJT, MOSFET, dan thyristor. Analisis dan desain penguat satu tahap: bias DC, perilaku sinyal kecil, dan tanggapan frekuensi. Tahap output dan penguat daya. Logika CMOS.
Physics, operation, and models of diodes, BJT, MOSFET, and thyristors. Analysis and design of single-stage amplifiers: DC bias, small-signal properties, and frequency responses. Output Stage and Power Amplifier. CMOS logics.
Silabus Lengkap Mata kuliah ini merupakan mata kuliah pertama dalam elektronika. Cakupan materi: Fisik, operasi, dan model dioda, BJT, MOSFET, dan thyristor, Analisis dan desain penguat satu tahap: bias DC, perilaku sinyal kecil, dan tanggapan frekuensi, Klasifikasi tahap output dan penguat daya, pemodelan Thermal dan analisis transistor daya, analisis unjuk kerja inverter CMOS dan perancangan gerbang logika CMOS. Setelah menyelsaikan mata kuliah ini mahasiswa diharapkan dapat menganalisis dan merancang sirkuit sederhana menggunakan dioda, BJT, MOSFET dan, menerapkan thyristor untuk kontrol dayalistrik sederhana, menganalisis tingkat keluaran dari penguat daya dan operasi termal aman, dan desain gerbang logika CMOS AOI.
This course is the first course in electronics. It covers Physics, operation, and models of diodes, BJT, MOSFET, and thyristors, Analysis and design of single-stage amplifiers: DC bias, small-signal properties, and frequency responses, Classification of amplifier power amplifier output stages, Thermal modelling and analyses of power transistors, Analyses of CMOS inverter performances and design of CMOS and-or-invert logic gates. Finishing this course student will be able to analyse and design simple circuits utilizing diode, BJT, and MOSFET, apply thyristor for simple power controls, analyse output stage of a power amplifier and its thermal save operation,  and design CMOS AOI logic gates.
Luaran (Outcomes)
  1. Draw the I-V characteristics of a PN junction diode, BJT, MOSFET, and thyristors.
  2. Determine the different regions of operation of diode, BJT, and MOSFET.
  3. Draw the small-signal model for Diode, BJT and MOSFET.
  4. Determine the small-signal parameters of a small-signal model.
  5. Design the DC biasing for a single transistor
  6. Analyze the small-signal properties (input and output impedance, and gain) of a single transistor amplifier.
  7. Analyze the frequency response of a single transistor amplifier.
  8. Apply thyristor for a simple power control.
  9. Analyse output stage of power amplifiers and its thermal properties.
  10. Analyse CMOS inverter performance and design of CMOS AOI logic gates.
Matakuliah Terkait ELS2101 Rangkaian Elektrik Prasyarat
ELS2102 Praktikum Elektronika Bersamaan
Kegiatan Penunjang Praktikum Elektronika
Pustaka
  1. Sedra and K. Smith, Microelectronic Circuits International 6th ed., Oxford University Press, 2011
Thomas L Floyd, Electronic Devices 9th ed, Prentice Hall, 2011
Panduan Penilaian Tugas, Ujian 1, Ujian 2, Ujian Akhir
Catatan Tambahan

 

Mg# Topik Sub Topik Capaian Belajar Mahasiswa Sumber Materi
1
  • History and overview
    (1 hr)

 
  • Tube, transistor, and integrated circuits and the information era.
  • Signal representation and circuit macro modelling.
  • Explain how electronics drives the exponential growth in the information era. (C2)
  • Illustrate the concepts of circuit macro modelling and its application for analysing large and complex circuits. (C2)
 Sedra Chp. 1.
Sec. 1.1 – 1.6
  • Electronic properties of materials (2 hrs)
  • Basic semiconductor concepts.
  • Semiconductors and device properties.
  • Explain and apply the semiconductor concepts of drift, diffusion, donors and acceptors, majority and minority carriers, excess carriers. (C2)
  • Summarize the main semiconductor properties, energy band, carrier concentration and transport, used for understanding electronic device characteristics. (C2)
 Sedra Chp. 1.
Sec. 1.7 – 1.12
2
  • Diodes (3 hrs)
  • Diode structure and IV characteristics
  • Diode models: large signal models, DC and small signal models
  • Explain the underlying physics and principles of operation of p-n junction diodes. (C2)
  • Produce an incremental (small signal) linear equivalent circuit (LEC) model for a diode knowing its large signal characteristics, and understand and apply standard LEC models for p-n diodes. (C3)
  • Express the various diode models and their the limitations and choose the appropriate model for a given problem or situation. (C3)
  • Produce parameter values for large signal and incremental LEC models for p-n diodes based on knowledge of the device structure and dimensions, and of the bias condition. (C3)
  • Perform a small-signal analysis of diode circuits using small signal models for the diodes. (C4)

Sedra Chp. 3

Sec. 3.1-3.3
3
  • Diodes (3 hrs)
  • Diode models: reverse breakdown (zener).
  • Diode applications circuits: rectifying, limiting and clamping, signal switching.
  • Perform an analysis of regulator circuits using zener (C4)
  • Design simple Diodes circuits to meet stated operating specifications. (C5)

Sedra Chp. 3

Sec. 3.4-3.6
4
  • Thyristor (2 hrs)

 
  • PNPN Diode and SCR
  • DIAC and TRIAC
  • Application of thyristor
  • Explain the operation of PNPN diodes and SCR.
  • Apply SCR and TRIAC for simple power drive.
 Floyd Chp. 11
  • Bipolar transistor (1 hr)
  • BJT structure, modes of operation.
  • Explain the underlying physics and principles of operation of bipolar junction transistors (BJTs). (C2)

Sedra Chp. 4

Sec. 4.1
5
  • Bipolar transistor (3 hrs)
  • BJT IV characteristics.
  • BJT models: large signal and DC models
  • BJT models small signal models.
  • Describes the IV characteristics of BJTs. (C2)
  • Express the various BJT models and their the limitations, choose the appropriate model for a given problem or situation.  (C3)
  • Produce an incremental (small signal) linear equivalent circuit (LEC) model for a BJTknowing its large signal characteristics, and understand and apply standard LEC models for BJTs. (C3)
  • Produce parameter values for large signal and incremental LEC models for BJTs based on knowledge of the device structure and dimensions, and of the bias condition. (C3)

Sedra Chp. 4

Sec. 4.2-4.4
6
  • Bipolar transistor (3 hrs)
  • BJT as an amplifier: General Configurations
  • Common Emitter (CE) Amplifier
  • Common Collector (CC) Amplifier
  • Common Base (CB) Amplifier
  • Explain, compare, and contrast the input, output, and gain characteristics of BJT amplifier. (C4)
  • Perform a small-signal analysis of an amplifier using small signal models for the BJTs. C(4)

Sedra Chp. 4

Sec. 4.5-4.6
7
  • Bipolar transistor (2 hr)
  • BJT amplifier biasing circuits.
  • BJT as a switch.
  • Design BJT biasing circuit for a single transistor amplifier. (C5)
  • Design simple BJT amplifier circuits to meet stated operating specifications. (C5)
  • Perform analyses of BJT as a switch. (C4)

Sedra Chp. 4

Sec. 4.7-4.8
  • MOS transistor (1 hr)
  • MOSFET structure, modes of operation
  • Explain the underlying physics and principles of operation of MOS field effect transistors (MOSFETs). (C2)

Sedra Chp. 5

Sec. 5.1
8
  • MOS transistor (3 hrs)
  • MOSFET IV characteristics.
  • MOSFET models: large signal models
  • MOSFET circuits at DC
  • MOSFET models: small signal models.
  • Describe the IV characteristic of a MOSFET
  • Express the various MOSFET models and their the limitations and choose the appropriate model for a given problem or situation. (C3)
  • Produce an incremental (small signal) linear equivalent circuit (LEC) model for a MOSFET knowing its large signal characteristics, and understand and apply standard LEC models for MOSFETs. (C3)
  • Produce parameter values for large signal and incremental LEC models for MOSFETs based on knowledge of the device structure and dimensions, and of the bias condition. (C3)

Sedra Chp. 5

Sec. 5.2-5.4
9
  • MOS transistor (3 hrs)
  • MOSFET as an amplifier, bias, and biasing circuits.
  • Basic single MOSFET amplifier configurations
  • Common Source (CS) Amplifier
  • Common Drain (SD) Amplifier
  • Common Gate (CG Amplifier)
  • MOSFET Biasing Circuits
  • Design MOS biasing circuit for a single transistor amplifier. (C5)
  • Explain, compare, and contrast the input, output, and gain characteristics of single MOSFET amplifier. (C4)
  • Perform a small-signal analysis of an CD, CS and CG amplifiers using small signal models for the MOS. C(4)
  • Design simple MOS amplifier circuits to meet stated operating specifications. (C5)

Sedra Chp. 5

Sec. 5.5-5.8
10
  • MOS transistor (2 hr)
  • MOSFET as a switch.
  • Perform analyses of MOSFET as a switch. (C4)
  • Frequency Response (1 hrs)
  • Amplifier transfer function.
  • Sketch the magnitude and phaseof amplifiers transfer function charateristics. (C3)

Sedra Chp. 8

Sec. 8.1
11
  • Frequency Response (3 hrs)
  • Low frequency respons of amplifier
  • Common emitter transistor short circuit current gain.  Transition frequency.
  • Hybrid – p model of the bipolar junction transistor.
  • Miller’s theorem and Miller effect inthe  voltage gain of common emitter and common source amplifiers.
  • Produce and apply the small signal BJT and MOSFET models for low frequency response of simple amplifier circuits. (C3)
  • Express the high frequency limitations of BJTs and MOSFETs. (C2)
  • Produce a small signal linear equivalent circuit (LEC, hybrid-p) model for a MOSFET or BJT knowing its juction capacitances and terminal frequency. (C3)

Sedra Chp. 8

Sec. 8.2-8.5

12

 
  • Frequency Response (3 hr)
  • Single Transistor Amplifier small signal circuit equivalent for the high frequency
  • Produce and apply the small signal high frequency BJT and MOSFET models for CE or CS (C3)
  • Produce the small signal high frequency BJT and MOSFET models for the analyses of CC, CD, CB and CG amplifier circuits. (C3)

Sedra Chp. 8

Sec. 8.6-8.7
13
  • MOS logic families (1 hr)
  • Design parameters and issues in CMOS Logics (2 hrs)
  • Basic concepts, NMOS and CMOS logic circuits.
  • Design and analyses of CMOS inverters.
  • Explain the operation and features of common MOS logic inverter stages. (C2)Produce the transfer characteristics of a CMOS inverter and show how device dimensions and parameters impact them and inverter switching speed. (C3)
  • Solve the output produced by a circuit for a given set of inputs using the switch resistor model of a MOSFET. (C3)

Sedra Chp. 14

Sec. 14.1

Sedra Chp. 14

Sec. 14.2-14.3
14
  • Design parameters and issues in CMOS Logics (3 hrs)
  • Performance analyses of CMOS inverters
  • CMOS AOI gate structures
  • Survey the power dissipation in digital gates and employ CMOS technology to reduce static power losses. (C4)
  • Design AOI gate circuits.

Sedra Chp. 14

Sec. 14.3-14.4
15
  • Output Stage and Power Amplifier (3 hrs)
  • Classification of amplifier output stages, output signal waveform, and power disipation.
  • Biasing the class AB amplifier.
  • Thermal modelling and thermal management of the transistor power amplifier.
  • Explain, compare, and contrast the classes of output stages and power amplifier. (C4)
  • Determine the operating class (A, AB, B, C) of amplifiers, explain the applications of each type.
  • Perform load line analysis to predict the voltage swing of transistor circuits and sketch the transfer characteristics. (C4)
  • Appl y the simplified large signal model to calculate output power, dissipation power and efficiency for emitter (source) follower output stage and class B output stage. (C3)
  • Perform simple thermal analyses of power transistors. (C4)

Sedra Chp. 13

Sec. 13.1-13.7